small-signal highfrequency characteristics of their transistors

A common way for manufacturers to provide information on the small-signal highfrequency characteristics of their transistors is by quoting typical and minimum (or maximum) values for the current-gain bandwidth product (fT), the collector-base capacitance (Ccb), and the emitter-base capacitance (ceb) under specified measurement conditions. For example, the following information might be given:
(a) Describe a procedure for obtaining Cp in the high-frequency hybrid-p model from this information, and calculate a value for it,
(b) Do the same as in part a for Cµ.
(c) Calculate the base transit time, tb, for this transistor.